To Örebro University

One of the primary goals for monolayer device fabrications and an ideal model of graphene as an atomic thin "canvas" is one that permits semiconducting/insulating lateral nanopatterns to be freely and directly drawn on the semimetallic graphene surface. This work demonstrates a reversible electron-beam-activated technique that allows direct writing of semiconducting/insulating fluorographene lateral nanopatterns with tunable bandgaps on the graphene surface with a resolution down to 9-15 nm. This approach overcomes the conventional limit of semiconducting C4F in the single-sided fluorination of supported graphene and achieves insulating C2F. Moreover, applying this technique on bilayer graphene demonstrates for the first time a new type of rectangular moire pattern arising from the generated C2F boat/graphene superlattice. This novel technique constitutes a new approach to fabricating graphene-based flexible and transparent electronic nanodevices with the CxF channels utilized as semiconducting or insulating counterparts, and also opens a route toward the tailoring and engineering of electronic properties of such materials in addition to the dominating triangular moire patterns from a graphene/hBN system.