Photoelectron dispersion in metallic and insulating VO2 thin filmsShow others and affiliations
2021 (English)In: Physical Review Research, E-ISSN 2643-1564, Vol. 3, no 3, article id 033286Article in journal (Refereed) Published
Abstract [en]
The underlying mechanism behind the metal-to-insulator transition in VO2 is still a topic of intense debate. The two leading theoretical interpretations associate the transition with either electron-lattice or electron-electron correlations. Novel experimental results are required to converge towards one of the two scenarios. Here we report on a temperature-dependent angle-resolved photoelectron study of VO2 thin films across the metal-to-insulator transition. The obtained experimental results are compared to density functional theory calculations. We find an overall energy shift and compression of the electronic band structure across the transition while the overall band topology is conserved. The results demonstrate the importance of electron-electron correlations in establishing the insulating state.
Place, publisher, year, edition, pages
American Physical Society , 2021. Vol. 3, no 3, article id 033286
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:oru:diva-95135DOI: 10.1103/PhysRevResearch.3.033286ISI: 000705663100001Scopus ID: 2-s2.0-85116323736OAI: oai:DiVA.org:oru-95135DiVA, id: diva2:1604731
Funder
Swedish Research Council, INCA-2014-6426 2015-04062 2016-06955 2017-050782019-03486Knut and Alice Wallenberg Foundation, 2012-0321 2018-0104Swedish Foundation for Strategic Research Swedish Energy AgencyEuropean Commission, 854843eSSENCE - An eScience Collaboration
Note
Funding agencies:
Chalmers University of Technology
ST
UPP
2021-10-212021-10-212021-10-21Bibliographically approved